| 摘要 |
PURPOSE:To obtain a homogeneous and high quality compound semiconductor with good reproducibility, by introducing the vapor of organic metal compound kept over a room temperature and under a boiling point into a reaction tube at a temperature under the decomposition temperature thereof. CONSTITUTION:A thermostat 20 is kept at 50 deg.C with TEIn (triethyl In) in a bomb 2 kept at T1=50 deg.C and heated for keeping at T2=70 deg.C. H23 is purified 4 and controlled 6 to 100cc/min with PH3l diluted to 5% with H2 controlled 8 to 10cc/min. Carrier H2 is controlled 5 to 3,000cc/min t to be supplied to the reaction tube 13 for the growth of InP on a substrate 15 at 600 deg.C. This method increases the vapor pressure of TEIn in the bomb 2 with the reduction of the introduced amount of H2 to producte no liquid-drops of TEIn on bubbling without choking the tube or liquid-drop attachment on the substrate. Further, heating 21 prevents TEIn from attaching on the tube wall, choking and decomposing. Thus, a homogeneous and high quality InP is grown with good reproducibility. |
