发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent disconnection by vertically evaporating a metal on an insulating film with difference in stages and thickening film thickness more than the difference in stages. CONSTITUTION:Al 9 is evaporated onto the surface of the insulating film 8 with difference in stages in the vertical direction, and the film thickness is deposited at value thicker than the difference in stages. According to this constitution, shade is not generated at the difference section in stages, thus preventing the formation of voids in a formed film, then obviating disconnection. Consequently, when an evaporating source 1 is set at the center of the curvature of a jig 10 in an evaporator 4, the thickness of the evaporated film is equalized because the evaporating source is vertical to a substrate and the substrate is moved even when the substrate 2 is turned at any position.
申请公布号 JPS57149730(A) 申请公布日期 1982.09.16
申请号 JP19810035726 申请日期 1981.03.12
申请人 NIPPON DENKI KK 发明人 OKA KENJI
分类号 H01L21/3205;H01L21/285;H01L21/60 主分类号 H01L21/3205
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