| 摘要 |
PURPOSE:To make a semiconductor laser long life by partially changing crystal composition so that the luminous output surface of semiconductor crystal performing laser operation and the neighbouring region may have broader band width than luminous energy. CONSTITUTION:In a semiconductor laser element formed a p type Al0.35Ga0.65 AS layer 2 and an n type AlGa0.35GA0.65AS layer 4 by inserting a GaAS active layer on a GaAS substrate 5, A diffused part 8 is formed as a protective layer having a wide energy gap by changing the composition of semiconductor crystal by the use of an ion implantation method to the cleaved end surface or a method diffusing phosphorus in GaAS. The probability generating a defect in the semiconductor protective layer is decreased by forming such a semiconductor region and the defect is not absorbed to laser light even if the defect exists. Therefore the defect will not have an influence upon laser operation. |
