| 摘要 |
Method of fabricating monolithic integrated circuit structure incorporating a full-wave diode bridge rectifier of four Schottky diodes. A body of silicon is produced by growing an epitaxial layer of N-type silicon on a P-type substrate. P-type imparting material is diffused into the layer to form isolating barriers delineating first and second N-type zones separated from each other by intervening P-type material and third and fourth N-type zones which are contiguous. A mixture of titanium and tungsten is deposited on portions of the zones and heated to form a mixed silicide. Schottky rectifying barriers are produced at the interfaces of the mixed silicide and N-type zones. Conductive members are formed; a first conductive member is connected to the N-type material of the first zone and the silicide of the third zone, a second conductive member is connected to the N-type material of the second zone and the silicide of the fourth zone, a third conductive member is connected in common to the silicide of the first and second zones, and a fourth conductive member is connected to the N-type material of the third and fourth zones. An AC voltage applied across the first and second conductive members produces a DC voltage across the third and fourth conductive members. |
