| 摘要 |
PURPOSE:To perform the vapor epitaxy of a compound semiconductor with low impurity concentration, by making the mixture of the organic metal compound containing elements to be added and the organic metal compound containing constitutent elements a material for adding impurities. CONSTITUTION:The mixture of diethyl Zn (0.3% in molarity) and triethyl In is stored in a bomb 1, and triethyl In for raw material in a bomb 2. Purified 5 H24 is controlled 6, 7, 9, 10 in flow rate (cc/min) to change each into 10, 10<3>, 10<3>, 10<3>, and PH3 is controlled 8 in flow rate (cc/min) into 10 to be supplied to a reaction tube 12. Further, a susceptor 19 is set at 600 deg.C by frequency heating 18. Thus, the vapor epitaxy of InP grows the P type InP with appr. 1X10<16>/cm<3> of Zn concentration on a substrate 15 to obtain a layer in low concentration with appr. 1/10 or less of a conventional one. |
