| 摘要 |
PURPOSE:To miniaturize and lighten the vessel while improving stability at a high temperature by preparing a compression type airtight terminal as the cover of the semiconductor vessel by a steel plate, into which either of C, B, Cr or Mn is contained by 0.1-0.8wt%, changing the surface layer section into the removed layer of the material contained and coating the surface layer section with an oxide film. CONSTITUTION:The airtight terminal 11, which uses an Au-Si eutectic alloy and loads an IC element not shown, is formed by a stem 12 prepared through the press work of the steel plate containing 0.2wt% carbon. A plurality of through-holes 15 for fixing lead terminals are bored circularly to the stem, the stem is entered into a wet hydrogen atmosphere brought to approximately 1,000 deg.C, and held for approximately fifteen min., carbon in a region existing at the depth of approximately 10% of the thickness of the stem 12 is removed, and the region is changed into the decarburized layer 16. The stem is shifted into an oxidizing atmosphere brought to 700 deg.C, the oxide film 17 is formed onto the whole surface, the lead terminals 13 are inserted into the through- holes 15 shaped previously, and the holes are filled with welding glass 14 and brought to airtight conditions. Accordingly, the terminal having high stability at the high temperature can be obtained while being miniaturized and lightened. |
