| 摘要 |
PURPOSE:To improve the characteristics of etching and controllability by irradiating ultraviolet rays to a photo-resist pattern and thermally treating it and conducting dry etching. CONSTITUTION:N2 Is discharged when ultraviolet rays are irradiated to the resist pattern or it is heated at 130 deg.C or higher, and etching can be conducted at predetermined speed, but an effect by an organic solvent, etc., which are not decomposed optically, is eliminated when further using jointly heat treatment, the etching further becomes effective, and the characteristics of etching and controllability are improved. It is preferabe that such treatment is executed just before etching, and the characteristics of etching is further improved when the resist pattern is exposed and heated in a pretreatment chamber and carried up to an etching chamber in vacuum. |
