发明名称 ION PLATING DEVICE
摘要 PURPOSE:To form a film having uniform thickness on a substrate at a high speed, by locating an evaporator between a target and the substrate, and depositing a spattered substance from the target and an evaporated substance from an evaporation source onto the substrate. CONSTITUTION:The interior of a vessel 2 is made vacuous, and inert gas is introduced through a gas-introducing pipe 4. A magnetron spattering device 5 is driven to form an electromagnetic field around a target 6. In this state, spattering is started. Thereafter, an evaporator 7 comprising an electrode 8 and a spiral filament 9 is driven, so that a metallic atom or molecular evaporated from the evaporation source is ionized due to a plasma state around the target 6 and accelrated by the electric field. A part of the metallic atom or molecular is deposited onto a substrate 11, while the other part in company with gas ion spatters the target 6. In this way, the particles are accelecrated by the electric field between the plasma and the substrate 11, and thermion is discharged from the filament 9. Consequently, formation of the deposition film is facilitated with high efficiency.
申请公布号 JPS57149468(A) 申请公布日期 1982.09.16
申请号 JP19810034088 申请日期 1981.03.09
申请人 SANYOU SHINKUU KOGYO KK 发明人 KITAHATA AKIHIRO
分类号 C23C14/22;C23C14/32;C23C14/35;C23C14/36 主分类号 C23C14/22
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