| 摘要 |
PURPOSE:To prevent the temperature rise of the surface when exposing, and to obtain a minute pattern by forming an ejecting port contacting a gas controlled at a peripheral temperature or lower with the surface of a wafer. CONSTITUTION:The wafer 2 is placed on a base 1, and mounted under a chuck 3 for forming the flatness of the surface of the wafer. N2 cooled is ejected from the pipe 4 of the chuck 3, passed through the surface of the wafer and discharged from a pipe 5. Beams 6 passing an optical system are imaged onto the wafer 2. According to this constitution, the minute pattern of submicron can be worked particularly at desired accuracy because the temperature rise (approximately 2 deg.C) of the surface of the wafer through exposure can be prevented and undesired treatment due to a temperature change is obviated. |
