| 摘要 |
PURPOSE:To obtain a homogeneous compound semicondutor of high quality, by a method wherein a plurality of introduction tubes are connected into one, and bended parts down to one are set to introduce raw compounds into a reaction tube. CONSTITUTION:When PH3 is introduced from the tube 17 and TeIn from the tube 18, they are mixed and react in a junction A for the formation of intermediate product. The product flows with gas H2 through a single tube set in the bended parts B,C. Then, the intermediate product attaches 19, 20 on the bended parts. Therefore, the intermediate product causing heterogeneous crystal growth or the quality deterioration of a crystal is rarely supplied to the reaction tube 13 and whirls the flow of PH3 and TEIn in the bended parts B,C to be supplied to the reaction tube 13 after being sufficiently mixed. Thus, a homogeneous InP crystal of high quality can be grown by means of the removal action for intemediate product and the surfficient mixing action for raw compounds by bended parts of a single introduction tube. |
