发明名称 Control circuitry using a pull-down transistor for high voltage solid-state switches
摘要 To switch a first gated diode switch (GDS1) to the "OFF" state requires a voltage applied to the gate which is more positive than that of the anode or cathode and a sourcing of current into the gate of substantially the same order of magnitude as flows between the anode and cathode of the first switch. Control circuitry, which uses a second gated diode switch (GDSC) coupled by the cathode to the gate of the first switch (GDS1), is used to control the state of the first switch (GDS1). The control circuitry comprises a first branch circuit coupled to the gate of GDSC and to a first potential source +V1 and a second branch circuit coupled to the anode of GDSC and to a second potential source V2. The first branch circuit is connected to the gate of the second switch (GDSC) and controls the state thereof. The second branch circuit helps switch the first switch to the OFF state by providing a single current pulse or a plurality of current pulses into the gate of the first switch.
申请公布号 US4349751(A) 申请公布日期 1982.09.14
申请号 US19800120282 申请日期 1980.02.11
申请人 BELL TELEPHONE LABORATORIES, INCORPORATED 发明人 HARTMAN, ADRIAN R.;SHACKLE, PETER W.
分类号 H03K17/567;(IPC1-7):H03K17/60 主分类号 H03K17/567
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