发明名称 ELECTRON BEAM EXPOSURE
摘要 PURPOSE:To increase exposing speed while lessening memory capacity, by dividing data to indicate coordinates of electron beam irradiation into upper and lower bits bordering at a certain bit, publishing rotational distortion compensating data in correspondence with them, and storing them in a memory. CONSTITUTION:When the data indicate the X and Y coordinates of electron beam irradiation are given by a CPU1, upper and lower bits of X-coordinate are stored in bit storages 2a and 2b of the first register 2 respectively. Similarly, upper and lower bits of Y-coordinate are stored in bit storages 3a and 3b of the second register 3. Next, the stored bits are memorized at memories 4, 6, 7, 8. The memories 4, 6 are output to a D/A converter 15 via adders 12, 13 and a register 14. Similarly, the memories 7, 8 are output to a D/A converter 20 via adders 17, 18 and a register 19. In this constitution, each point of a wafer is irradiated by electron beam with a use of outputs of the converters 15, 20.
申请公布号 JPS57148348(A) 申请公布日期 1982.09.13
申请号 JP19810033677 申请日期 1981.03.09
申请人 NIPPON DENSHI KK 发明人 SATOU HITOSHI
分类号 H01L21/027;H01J37/302 主分类号 H01L21/027
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