发明名称 SEMICONDUCTOR LASER AND MANUFACTURE THEREOF
摘要 PURPOSE:To obtain the output lights of high quality aligned in modes in lasers having bent active layer in a striped groove by forming the section of the groove having a depth of 1-5mum and a width of 3-10mum. CONSTITUTION:A stripe groove 10 of rectangular shape in section having a width D of 3-10mum and a depth D of 1-5mum is formed at an n type GaAs substrate 11. The surface of the substrate 11 is formed in (100) plane, and the striped groove 10 is formed in (110) direction. A clad layer 12 having a thickness of 1-2mum at the groove and 0.1-1mum at the portion out of the groove is formed on the substrate 11 having the groove 10, and an active layer 13 is formed on the layer 12. Since the layer 12 is formed in the shape corresponding to the groove 10, the layer 13 has a bent part on the groove. Since the flat part of a width W1 is provided at the deepest part 131 of the bent part, laser lights of aligned modes can be emitted.
申请公布号 JPS57147292(A) 申请公布日期 1982.09.11
申请号 JP19810031301 申请日期 1981.03.06
申请人 HITACHI SEISAKUSHO KK 发明人 KURODA IKUROU;KASHIMURA TAKASHI;KASHIWADA YASUTOSHI;UMEDA JIYUNICHI
分类号 H01L21/208;H01S5/00;H01S5/223 主分类号 H01L21/208
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