发明名称 PROTECTING DEVICE FOR MIS INTEGRATED CIRCUIT
摘要 PURPOSE:To prevent the adverse influence to a protecting device when negatively excessive noise voltage is applied to an input terminnal by connecting the isolation region of the diffused resistor of the device to a low voltage source via the resistor. CONSTITUTION:A diffused resistor 12 is connected between an input terminal IN and a C-MOS inverter 10, and a diode is connected between the input terminal of the inverter 10 and high and low voltage sources VCC, VSS. Further, a resistor 45 is connected between the isolation region of the resistor 12 and the low voltage source VSS. When the resistor 45 is thus provided, even if negatively excessive noise voltage is applied to the input terminal, the current flowing through the source VSS, resistor 12 and input terminal IN is limited. Accordingly, the burnout due to overcurrent can be prevented.
申请公布号 JPS57147278(A) 申请公布日期 1982.09.11
申请号 JP19810031751 申请日期 1981.03.05
申请人 FUJITSU KK 发明人 ITOU HIDEAKI;SUZUKI ATSUSHI
分类号 H03F1/52;H01L27/02;H01L27/06;H01L29/78;H02H7/20;H03F1/00;H03F1/42 主分类号 H03F1/52
代理机构 代理人
主权项
地址