| 摘要 |
PURPOSE:To enable the current switching between two electron channels by providing mena for individually injecting electrons to a plurality of channel layers of multilayer semiconductor layer periodically varying in the band edge energy of a transmission band. CONSTITUTION:The band edge energy of a transmission band is provided to be low at GaAs layers 3a, 3b and high at GaAlAs layers 2a-2c. Then, a voltage is applied to electrodes 5a, 5b, and electrons are injected to the layers 3a, 3b forming an electron channel layer. In this case, a voltage is applied to either or both of controlling electrodes 6a, 6b, thereby varying electron channels 3a, 3b and the potential of the barrier 2a therebetween. Since the variation of the potential eventually varies the coupling coefficient K between the channels 3a and 3b, the current switching between the two channels 3a and 3b can be performed. |
