| 摘要 |
PURPOSE:To eliminate the need for extracting and removing the reaction pipe in order to remove the extraneous matter on a reaction pipe wall, and to unnecessitate the lowering of the temperature of a reaction oven by generating gas plasma by disposing an electrode for generating plasma and removing the extraneous matter. CONSTITUTION:A gas system 5 is controlled by means of a gas controller 6, and an etching gas is injected into the reaction pipe 4. An oscillator 7 for plasma is actuated, plasma is generated in the reaction pipe held by the electrode 3 surrounding the reaction pipe, and the extraneous matter is removed. The extraneous matter is removed, the oscillation of plasma is stopped, and the original forming process of a CVD film can be started. |
