| 摘要 |
PURPOSE:To simplify a process by forming an electrode deposit layer having a predetermined shape onto a first conductivity type region shaped in at least one part of a semiconductor substrate through an insulating film, implanting second conductivity type impurity ions to the first conductivity type region, using the electrode deposit layer as one part of at least a mask, and thermally treating the first conductivity type region. CONSTITUTION:Electrode deposit layers 17, 18 consisting of a polycrystalline silicon layer 15 and a high melting-point metallic silicide 16 shaped onto a first conductivity type region 12 in a semiconductor substrate 10, one part of which has the first conductivity type region 12, through an insulating film 13 and having a prescribed shape are formed, second conductivity type impurity ions are implanted into the first conductivity type region 12, employing the electrode deposit layers 17, 18 as one part of at least masks to shape an ion implantation region, and the electrode deposit layers and the ion implantation region are activated through heat treatment in a short time. An interlayer insulating film is grown as seen in a CMOS integrated circuit, a contact hole is bored, and an aluminum electrode wiring is lead out. Accordingly, process is shortened. |
