| 摘要 |
PURPOSE:To enable setting of the surface of a crystal wafer parallel to and in the same plane as the surface of a polishing holder by attracting by vacuum the wafer to the flat chucking surface and bonding it to the holder while holding the wafer. CONSTITUTION:A chuck 15 of disc shape is provided on a polishing holder 13 on a hot plate 14. A hole 16 for attracting by vacuum a wafer 11 is opened at the chuck 15. When a hot plate 14 is heated so that the bonding wax 12 on the holder 13 is molten, the chuck 13 attracting the wafer 11 is placed on the wax, and the height h from the surface of the holder 13 to the wafer is set to the same size by a micrometer head 17 provided at the outer periphery of the chuck 15, thereby setting uniform machining quantity. |
