| 摘要 |
PURPOSE:To prevent the destruction of a pattern due to electric charging and spak, by connecting many metallic patterns to one another with the same materials as these patterns in a hard mask where metallic patterns are formed on an insulating substrate. CONSTITUTION:A hard mask for production of semiconductor devices is obtained where many metallic patterns 1 are formed on an insulating glass substrate. In this case, metallic patterns 1 are connected to one another on a dieing line by connecting patterns 3 consisting of the same materials as metallic pattern 1, or connecting patterns 3 are connected to metallic pattern 1 in a form of minute wires. Thus, the electrostatic capacity of the metallic pattern is increased to suppress the electrostatic breakdown, and connecting patterns are manufactured easily in the same process as metallic patterns because connecting patterns consists of the same materials as metallic patterns. |
