发明名称 |
ELECTRICALLY ERASABLE PROM |
摘要 |
<p>An electrically erasable programmable read-only memory (E2PROM) is provided which utilizes an inhibit voltage applied to unselected word lines during writing to prevent writing in unselected rows. In the preferred embodiment, each memory cell of the E2PROM array consists of a single floating gate field effect transistor. The E2PROM of the present invention provides for row erasure and single bit writing.</p> |
申请公布号 |
JPS57147195(A) |
申请公布日期 |
1982.09.10 |
申请号 |
JP19810183937 |
申请日期 |
1981.11.18 |
申请人 |
FAIRCHILD CAMERA & INSTRUMENT CORP |
发明人 |
ANDORIYUU SHII TEIKURU |
分类号 |
G11C17/00;G11C8/12;G11C16/04;G11C16/06;G11C16/08;G11C16/16;G11C16/34;H01L27/10 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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