发明名称 TARGET FOR SPUTTERING DEVICE
摘要 PURPOSE:To avoid the occurrence of cracks to a titled target during a sputtering process, by providing a metallic film on the rear surface of a target main body and supporting and fixing the rear side of the main body to a cooling part. CONSTITUTION:An Ni group metallic film 2 of about 30-50mu thickness is coated on the rear surface of a target main body 1 made of molybdenum silicide, for example and having a trapezoidal section. The film 2 is direcily press-contacted with a cooling flange 3 made of copper, for example, and supported and fixed by a holder ring 4 and a screw 5. At the same time, a cooled water is flowed to a cavity 6 in the flange 3. A sputtering process of molybdenum silicide is carried out with use of such target. As a result, no tensile stress is generated in the main body 1 even when about 10KW electric power is applied. Thus a sputtering process is carried out in a satisfactory state and without causing any crack.
申请公布号 JPS57145981(A) 申请公布日期 1982.09.09
申请号 JP19810030208 申请日期 1981.03.03
申请人 TOKYO SHIBAURA DENKI KK 发明人 OKUMURA KATSUYA;UEDA MASAAKI
分类号 C23C14/34 主分类号 C23C14/34
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