| 摘要 |
PURPOSE:To obtain a wiring of a high reliability in which an etching process can be omitted and any step difference is not caused in an electrode by using for a wiring material a silicide for use as the compound alloy of the metal such as a molybdenum or the like and silicon. CONSTITUTION:After a field oxide film 2 is grown in a predetermined part of silicon substrate 1 and a gate oxide film 3 is grown in the other part thereof, and a source and drain regions 6, 7 and a silicide film 8 are formed. Successively, after the oxide film on the regions 6, 7 is removed, a silicide film 8 is formed on the entire surface of the substrate 1 and further a nitride silicon film 9 is covered on the film 8. Subsequently, the films 7, 8 are removed while leaving a gate electrode part 10, wiring part 11 and source-drain contact part 12. Subsequently, the substrate 1 is placed in the oxidization atomosphere to grow an interlayer oxide film 13 by using the film 9 as a mask. finally, after the film 9 at the top of the film 8 is removed, an aluminium electrode is provided in the top appearing on the plane similar substantially to the film 13 and a source electrode 14, drain electrode 15, gate electrode 16 and wiring electrode 17 are formed respectively. |
