发明名称 LEAD FRAME FOR SEMICONDUCTOR
摘要 PURPOSE:To obtain a lead frame which is inexpensive and excellent in assembling workability by providing a plating solder layer partially on the surface of a base body whereon a layer of Ni or an Ni alloy or a layer of Co or a Co alloy is formed. CONSTITUTION:An Ni-P alloy plated layer 4 is formed on the tab 2 of a base body 1 made of an Fe-42% Ni alloy and a lead terminal 3. Furthermore, the plating solder layer 5 containing Pb of 95% is laid on the tab 2, and after a heated semiconductor element 6 is pressed thereon, a wire connection 7 of the element 6 with the lead terminal 3 is conducted. It is desirable that the plating solder layer 5 has a composition containing Pb of 80-98%, since the element is cracked frequently by a heat shock in a cycle of 150 deg.C and -50 deg.C when the content of Pb is less than 80%. when it is above 98%, the heat connectivity is reduced. The alloy layer may be formed on the whole surface or in a part thereof. This constitution enables preparation of the lead frame which is inexpensive, whereby the assembling workability is improved remarkably and which enables attainment of a highly reliable device.
申请公布号 JPS57145352(A) 申请公布日期 1982.09.08
申请号 JP19810030997 申请日期 1981.03.04
申请人 HITACHI DENSEN KK 发明人 YAMAGISHI RIYOUZOU;YOSHIOKA OSAMU
分类号 H01L21/52;H01L21/60;H01L23/495;H01L23/50 主分类号 H01L21/52
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