| 摘要 |
PURPOSE:To make it possible to control the laser light very simply, by using a semiconducotor laser wherein exciting regions and non-exciting regions are arranged and formed in the longitudinal direction of a resonator, and inputting the incident light from the outside under the state a specified bias current is supplied to the exciting regions. CONSTITUTION:On an N type semiconductor substrate 1, an N type semiconductor confining layer 2, N or P type semiconductor active layer 3, a P type semiconductor confining layer 4, and a P type electrode semiconductor layer 5 are laminated and grown. The opposing end surfaces of the obtained laminated body 6 are used as Fabry-P erot reflecting surfaces 7 and 8. An electrode 9 is deposited on the entire bottom surface of the substrate 1. A plurality of electrodes 10 are provided along the line connecting the reflecting surfaces 7 and 8 on the layer 5 with an interval being provided. The regions where the electrodes 10 are present are made to be the exciting regions M, and the regions where the electrodes 10 are not present are made to be non-exciting regions G. The bias current IB is flowed to all the electrodes 10 from a current source 11. Under this state, control light L is inputted to the reflecting surface, and the laser light B whose intensity corresponds to that of the light L is emitted from the reflecting surfaces 7 and 8. |
