| 摘要 |
PURPOSE:To obtain the strength of junction endurable against the use without cracks, by providing an SiO2 film with high coefficient of thermal expansion away from an electrode rather than from an Al2O3 film. CONSTITUTION:An Si substrate 1 is treated with thermal oxidation and an Si3N4 film 3 is superimposed on an SiO2 film 2 to evaporate Al for the formation of the first wiring layer. An Al wiring 5 and Al2O36 are patterned by anode oxidization. The SiO2 film 7 is gasphase grown to insulate the layer, and the second wiring layer is formed with multilayer metal film 8 consisting of Ti and Pt by selective opening to form the electrode 4 plated with Au. Then, when the end rim of the SiO27 with high coefficient of thermal expansion (18X10<-6>/ deg.K) is kept away from the electrode 4 rather than from the end rim of the Al2O3(9.2X10<-6>/ deg.K) 6, Al2O3 serves as a buffer against distortion to prevent in advance the occurence of cracks in thermo bonding of lead frame on the electrode 4. |
