| 摘要 |
PURPOSE:To obtain the highly integrated MIS IC, by providing two or more gate insulating films on a part of the surface of the semiconductor substrate and providing gate electrodes through the insulating films. CONSTITUTION:A thick field oxide film 12 is formed on the peripheral part of the P type Si substrate 11. A load MOS transistors are constituted on the exposed part of the substrate 11 surrounded by the film 12. One forms a thick gate oxide film 14, and the other forms the thin gate oxide film 16, respectively. Then, a gate electrode 15 is provided on the oxide film 14, and a gate electrode 17 is provided on the oxide film 16. With these electrode and film parts as a mask, N type source and drain regions 13 are diffused and formed on both sides of the electrodes. A terminal VDD is attached to one diffused region 13 and the electrode 15, a terminal VSS is attached to the other diffused region 13, a terminal VOUT is attached to the central diffused region, and a terminal VIN is attached to an electrode 17. Thus one gate oxide film 14 is made thick, which the conductance 1 of the transistor is reduced, and the and the channel length, when the same load resistance value is obtained, becomes short. |
