HEAT TREATMENT FOR COMPOUND SEMICONDUCTOR WAFER

摘要

PURPOSE:To improve the quality of a compound semiconductor crystal which is contaminated by a heavy metal by covering III-V group semiconductor compound wafer with a thermal decomposition controlling protection film in a condition having a misfit transposition based on grating constant difference. CONSTITUTION:As an example, a three-dimensional mixed crystal of Ga Aso9Po is formed at 1.2mu by a vapor growth processing on the surface of GaAs epitaxial wafer for infrared ray luminous diode use and a misfit transposition is introduced. The surface of the GaAso9Po layer is covered with Si3N4 film of 0.1mu and a heat treatment is provided for the surface at 850 deg.C for 5hr in an argon atmosphere. The light emitting effect due to the heat treatment as described above can be improved remarkably and the quality of the compound semiconductor crystal contaminated also be improved remarkably.