Method of fabricating polysilicon electrodes

摘要

A Charge Coupled Device (CCD) structure employing two levels of electrode metallization. The field plate electrodes are arranged in pairs with the second one of each pair partially overlapping and insulated from the first one of its pair and the first one of the next pair. The structure can be operated two-phase or four-phase with four electrodes per bit and three-phase with three electrodes per bit by providing suitable amounts of electrode overlap and suitable drive circuitry. A particularly advantageous mode of two-phase operation with four electrodes per bit is enabled by providing asymmetrical overlapping of electrodes, the second electrode of each pair overlapping the first electrode of its pair more than the first electrode of the next pair.