| 摘要 |
PURPOSE:To reduce electric power consumption and to improve memory characteristic by constituting each of an electrochromic (EC) layer, a proton donator layer and a dielectric layer in such a way that their semiconductive properties are alternated like n-p-n type. CONSTITUTION:A transparent electrode 2 is provided on a glass substrate 1, and a dielectric layer 5 of Ta2O5, SiO or SiO2, FeTiO3 or the like having n type semiconductor properties and >=40 dielectric constant and of 100-3,000Angstrom thicknesses, a proton donator layer (El layer) 4 of Zr2O3, Cr2O3, NiO, etc., having p type semiconductor properties, and an EC layer 3 of WO3, MoO3, etc. having n type semiconductor properties are formed successively thereon. Next, a thin type solid state EC display element laminated with a transparent electrode 2' and an antireflection layer 6 successively on the layer 3 is manufactured. If is equally well to form the EC layer 3, the El layer 4 and the dielectric layer 5 in this order on the electrode 2. In this way, leak current is reduced considerably by interposing the El layer 4 between the layers 2 and 5, and memory time is made long. |
