发明名称 PREPARATION OF HIGH-PURITY SILICON
摘要 PURPOSE:To stabilize the fluidized state and improve the efficiency in depositing silicon of high purity from chlorosilane by the fluidizing method, by feeding a fluidizing deriving gas in portions divided in the height direction of a fluidized bed. CONSTITUTION:Seeds of fine silicon particles are fed from a seed particle introductory port 2 at the top of a fluidized bed reactor 1 and retained in the interior of the reactor 1. A chlorosilane gas is introduced from gas introductory ports 3, 4 and 5 for a fluidizing driving gas divided in many stages in the height direction of the reactor 1 to keep the fluidized state stable. Thus, the reaction proceeds fully to improve the conversion efficiency of the chlorosilane into the silicon.
申请公布号 JPS57145020(A) 申请公布日期 1982.09.07
申请号 JP19810027997 申请日期 1981.02.27
申请人 SHINETSU KAGAKU KOGYO KK 发明人 HASEGAWA JINICHIROU;KANEKO KIYOSHI;ENOMOTO YOSHIHIRO;WATANABE SATOSHI
分类号 C01B33/02;C01B33/027;C23C16/442 主分类号 C01B33/02
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