| 摘要 |
PURPOSE:To obtain high gain-band width product and current amplification factor in a wide current region by forming a plurality of emitter diffusion regions having different areas to the same base region thus forming electrodes corresponding to each emitter diffusion region. CONSTITUTION:The base region 2 of a P type impurity is formed to a silicon N type epitaxial wafer or a back diffusion wafer 1 through a diffusion, the emitter regions 31, 32 having different areas are diffused and formed to the same base region 2 by using an N type impurity, and each emitter region 31, 32 and the base region 2 are connected to respective electrode on a stem through wires. Accordingly, one transistor can have the characteristics of two transistors, the electrode of the small emitter 32 is used in a region in which collector currents are small, and the object is accomplished by employing the large emitter electrode 31 in a region in which collector currents are large. |
