MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To acquire a mesa-type semiconductor device coated with glass of even thickness on a P-N junction by means of electric floating, by using suspension added by intense acid radical or intense basic radical except alkaline metal. CONSTITUTION:Glass particles are suspended in non-water solvent like acetone to form glass coating by means of electric floating. If suspension added in little quantity by electrolyte of intense acid like hydrochloric acid or intense alkali like ammonia water is used, discrepancies such as randomness in cohesion speed of glass film and formation of nonselective glass film will occur. Therefore, instead of electrolyte of intense acid or intense alkali, suspension is formed by adding intense acid radical or intense basic radical except alkaline metal. The radical becomes buffer reagent against intense acid. It controls the ambient atmospheric influence and effects the continuous formation of glass coating with even thickness.