| 摘要 |
PURPOSE:To prevent the breakdown of an MOS transistor positively by forming a capacitor for protection, to which an insulating film having film thickness or the quality of material having dielectric resistance lower than that of an insulating film under the gate electrode is shaped, between an electrode connected to the gate electrode of the MOS transistor and a substrate. CONSTITUTION:The capacitor 14 for protection, the electrode 18 thereof is connected to the gate electrode 12 of the MOS transistor 2 formed onto the substrate 4, is shaped between the electrode 18 and the substrate 4 while holding the insulating film 16. In this case, the thickness of the insulating film 16 is thinned up to approximately half of the thickness of the gate insulating film 10 such as 1,000Angstrom , or the insulating film 16, dielectric resistance thereof is lower than that of the insulating film 10, is used. Accordingly, the MOS transistor can be prevented positively from breakdown because the dielectric resistance of the capacitor for protection is lower than that of the MOS transistor. |
