发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To obtain laser oscillation within a wide wavelength range without causing a mode-hop by using one cleavage plane of a semiconductor laser as one resonance mirror face and arranging a reflection means forming another movable resonance mirror face at the opposite side to the cleavage plane. CONSTITUTION:The cleavage plane 3 of the semiconductor laser 1 with a P-N junction 2 functions as one resonance mirror. Another crystal face 4 is coated to obtain a non-reflection face. The reflection means 5 rectangularly positioned such as an external mirror or a grating is arranged on the midway to the reciprocating course of beams. When driving currents I1 are flowed in the arrow (a), (b) direction, luminous wavelength is determined as lambda1 in response to I1. Consequently, a space L between the cleavage plane 3 and the external mirror 5 is adjusted and moved so as to be set to the integer times of lambda1. Accordingly, a mode-hop phenomenon is eliminated, and laser oscillation extending over the wide wavelength range can be conducted.
申请公布号 JPS57143887(A) 申请公布日期 1982.09.06
申请号 JP19810028535 申请日期 1981.02.27
申请人 FUJITSU KK 发明人 SHINOHARA KOUJI;NISHIJIMA YOSHINDO;KAWABATA YOSHIO;FUKUDA HIROKAZU;YAMAMOTO KOOSAKU
分类号 H01S5/00;H01S3/105;H01S5/06;H01S5/14 主分类号 H01S5/00
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