发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURE
摘要 PURPOSE:To reflect most of an optical output component being along a light emitting surface to the end surface of an optical fiber by forming a light emitting section in mesa structure, convexly shaping the side surface toward the outside of the light emitting section and coating the side surface with a metal having high optical reflectivity through an insulating film. CONSTITUTION:An N InP layer 16' is formed to an N InP substrate 16, an N In1-xGaxAs1-yPy layer 16'', an N InP layer 16''' and P<+> In1-xGaxAs1-yPy layer 16<+4> are convexly shaped successively toward the outside of the light emitting section, and the electrode 20 of AuZn is formed. The electrodes 19 of AuGeNi are formed at the reverse side of the electrode 20, and the side surface with mesa type structure is coated with the metal having high optical reflectivity through the insulating film. Accordingly, the optical output component which has not been coupled with the optical fiber can be combined with the optical fiber, and a light emitting diode having large light emitting output is obtained.
申请公布号 JPS57143880(A) 申请公布日期 1982.09.06
申请号 JP19810029716 申请日期 1981.03.02
申请人 FUJITSU KK 发明人 WADA OSAMU;TAKEUCHI YASUO
分类号 H01L33/10;H01L33/14;H01L33/20;H01L33/30;H01L33/40 主分类号 H01L33/10
代理机构 代理人
主权项
地址