ETCHING METHOD OF SEMICONDUCTOR FILM

摘要

PURPOSE:To acquire an optical conversion semiconductor device, by selectively etching only non-single crystal semiconductor in basic elements by means of mixed liquid (EPW) mainly composed of ethylene diamine and pyrocatechol. CONSTITUTION:Selective etching is done by utilizing etching characteristics of EPW that etching speed is slow in a transparent conductive metal film and fast in a non-single crystal semiconductor. As basic elements for this purpose, for instance, a transparent conductive film 21 is formed on a ceramic substrate 20, and a non-single crystal semiconductor 22 is formed thereon. A metal film 23 like aluminum film is formed on the semiconductor film. The metal film is mased. The semiconductor film 22 underneath is selectively etched in EPW reagent. The transparent conductive film 21 is is not etched along with the film 23 at the same time.