| 摘要 |
PURPOSE:To obtain the electrode structure having excellent electrical characteristics by laminating an InGaAsP active layer, the N type InP layer of a current pinched layer and the P type InGaAsP layer of an electrode forming layer onto an N type InP substrate and forming a diffusion region while penetrating the current pinched layer. CONSTITUTION:An N type InP buffer layer 2, the non-doped InGaAsP active layer 3 and a P type InP clad layer 4 are laminated onto the N type InP substrate 1, and the N type InP layer 5 forming the current pinched layer and the thin P type InGaAsP layer 11 shaping an ohmic contact are laminated. the striped P type selective diffusion region 7 is formed in depth penetrating the N type InP layer 5, and an ohmic electrode 10 at the P side of Ti-Pt-Au is shaped. Accordingly, the electrode structure, which inhibits ohmic resistance even in a narrow current injection region, thermal resistance thereof is small and the degradation of a semiconductor crystal thereof is little, can be formed. |
