| 摘要 |
PURPOSE:To simplify a manufacturing process, and to reduce cost by conducting impurity diffusion or ion implantation giving another one conduction type different from a semiconductor substrate having one conduction type to the whole surface of the semiconductor substrate. CONSTITUTION:A P-N junction is shaped by directly forming a P type region 1 to the whole surface of the N type region 2 of the N type substrate 4 through diffusion, and electrodes are evaporated by approximately conforming a metallic mask with a predetermined pattern to the orientation of a crystal. The substrate crystal is ground up to prescribed thickness from the back, the back electrodes are evaporated, the whole is scribed at predetermined pitches and separated, and LED chips are obtained. Accordingly, cost is reduced because a photo-resist process can be omitted. |
