| 摘要 |
<p>PURPOSE:To memorize information by low currents by a method wherein impurity ions are implanted in impurity doped polycrystal Si between memory terminals, currents are flowed, ions are activated and resistance is changed. CONSTITUTION:The impurity doped polycrystal Si 2 is formed onto an insulating film 1 made of SiO2, etc. and patterned, the impurity ions (the same conduction type or a reverse conduction type may be used) are implanted in an extent of which a region in which there is no implanted ion is left in the bottom, and an ion implanted region 4 (3 is Al or Al-Si film) is shaped. Currents are flowed before the ions are activated, the ions are activated, and the change of resistance between the memory terminals is brought about, thus storing the information. Accordingly, the PROM which can write by low currents can be formed through simple minute working technique.</p> |
