| 摘要 |
<p>A method of rectification of the alternating current through creating a gradient of the ratio between mobilities of electrons and holes in a semiconductor by means of a temperature gradient. The temperature gradient and the bipolar conductiviy are created through self heating of the material of the semiconductor with the rectified current with simultaneous cooling of a part of the material of the semiconductor, the value of the exponent α of the temperature (T) dependence of the relationship (b) between the mobilities of the electrons and holes in the semiconductor (b Tα) being equal to no less than 0.1. The method is implemented with a device comprising a semiconductor working element (2) with non-rectifying contacts (3 and 4) and a cooler (5) adjoining to the working element (2). The dimensions of the semiconductor working element (2) are so chosen as to ensure together with the cooler (4), within the range of working currents, a non-uniform self heating by the rectified current, the gradient of the relationship between the mobilities of the electrons and holes (db/dx) being equal to no less than 0.2 cm-1 and to further ensure the bipolar conductivity of the working element (2).</p> |
