| 摘要 |
PURPOSE:To obtain the IGFET which consumes less power by providing a source region having the same conductive type as that of a drain region in a semiconductor substrate which is to become a drain region, and providing a control electrode surrounded by a gate electrodes on the surface therebetween. CONSTITUTION:The substrate 3 which is to become the drain region is constituted by an N<+> type semiconductor layer 2, which is located at the lower side, and an N<-> type layer 1 thereon. A drain electrode M4 is deposited on the back surface of the substrate. Then two P type regions Z1 are diffused and formed in the layer 2, and N<+> type source regions Z3 are provided in the regions Z1. A source electrode M1 is provided on the area from the central part of each region Z3 to the edge part of each region Z1. An insulating layer 21 is deposited on a main surface 4 between the two regions Z3. Gate electrodes M2 are provided on both sides thereof. A control electrode M3 is deposited therebetween. Thus a channel region Z2 in which electrons are stored is formed in the layer 1 under the electrode M3, and the IGFET which consumes less power is obtained. |
