| 摘要 |
PURPOSE:To contrive high power output for the bipolar transistor by a method wherein the distribution of the windows, to be used to lead out the emitter electrode provided on an insulating film, is coarsely formed within the row on the inner side of the emitter region and the windows are densely formed within the row on the outer side of the emitter region. CONSTITUTION:The distribution of windows 1', provided on the second insulating film 12 on a polycrystalline Si layer 3, are changed between the inner side and the outer side of the emitter region arrangement. The interval within the row of the square windows, having a side of several mum, is narrowered outside the emitter region arrangement. The stabilized resistance per row of the emitter region is reduced in proportion to the narrowering of the interval within the row. According to this constitution, as the emitter stabilized resistance becomes larger as it approaches to the center region of the junction, the temperature distribution is equalized, thereby enabling to drop the operational temperature of the bipolar transistor. As a result, high output characteristics can also be improved. |
