| 发明名称 |
SEMICONDUCTOR LASER DEVICE |
| 摘要 |
A semiconductor laser device of the double-hetero structure has a semiconductor substrate (4), a semiconductor active layer (1) and cladding layers (2,3) sandwiching the active layer (1). …<??>In order to achieve a laser which can operate at a short wavelength. e.g. about 0.6 mu m, the substract (4) is GaAstP1-t (0.54 </= t </= 1.0) and the active layer (1) is GayIn1-yAsxP1-x(0.52 </= y </= 1.0 and 0 </= x </= 1.0). The first cladding layer (2) is GapAl1-pAsqP1-q (0 </= p </= 0.91 and 0.47 </= q </= 1.0) and the second cladding layer (3) is Gap min Al1-p min Asq min P1-q min (0 </= p min </= 0.91 and 0.47 </= q min </= 1.0). The two cladding layers (2,3) are of opposite conductivity type. The active layer (1) has an optical confinement region of refractivity higher than that of the cladding layers and a band gap narrower than that of the cladding layers. |
| 申请公布号 |
DE2963342(D1) |
申请公布日期 |
1982.09.02 |
| 申请号 |
DE19792963342 |
申请日期 |
1979.07.09 |
| 申请人 |
HITACHI, LTD. |
发明人 |
KAJIMURA, TAKASHI;HIRAO, MOTOHISA;NAKAMURA, MICHIHARU;KURODA, TAKAO;YAMASHITA, SHIGEO;UMEDA, JUNICHI |
| 分类号 |
H01L21/208;H01S5/00;H01S5/22;H01S5/323 |
主分类号 |
H01L21/208 |
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