| 摘要 |
<p>A semicoductor memory device is disclosed having memory cells forming a high-density of semiconductor device, which comprises a semiconductor substrate of a first conductivity type, first and second semiconductor regions of a second conductivity provided in the semiconductor substrate, the first and second semiconductor regions defining a channel region therebetween at the surface of the substrate, an insulator film disposed on the channel region, a conductive layer formed on the insulator film, means for producing depletion layers from the first and second semiconductor regions in such a manner that the depletion layers contact with each other to isolate the channel region from the substrate, means for selectively feeding majority carriers of the substrate to the channel region at a density higher than that of the substrate, and a means for detecting the existence of the accumulation of the majority carriers in the channel region. Read digit lines and write digit lines of said memory device are connected, respectively, with said third semiconductor regions and said means for feeding majority carriers.</p> |
