发明名称 Programmable read-only memory device
摘要 A PROM device having the improved bit address decoders composed of a plurality of AND gates, each of the AND gates comprising PNP type transistors, to each base of which is applied an address signal from the bit address inverters. Each collector of these transistors is connected to ground, and each emitter is connected to the output terminal of the bit address decoder.
申请公布号 US4347584(A) 申请公布日期 1982.08.31
申请号 US19800141934 申请日期 1980.04.21
申请人 FUJITSU LIMITED 发明人 FUKUSHIMA, TOSHITAKA;KOYAMA, KAZUMI;UENO, KOUJI;KAWABATA, YUICHI;MIYAMURA, TAMIO
分类号 G11C11/41;G11C11/413;G11C17/16;G11C17/18;(IPC1-7):G11C7/00 主分类号 G11C11/41
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