| 摘要 |
A body of a semiconductor material of a Group III-V compound or alloy of such compounds includes a substrate of one conductivity type with a pair of spaced, substantially parallel grooves in a surface thereof. Over the surface of the substrate and the grooves are, in sequence, a buffer epitaxial layer of the one conductivity type, a first confinement epitaxial layer of the one conductivity type, a guide epitaxial layer of the one conductivity type, an active epitaxial layer which is the active recombination layer, a second confinement epitaxial layer of the opposite conductivity type and a cap epitaxial layer of the opposite conductivity type. The epitaxial layers are of materials forming heterojunctions between the first confinement layer and the guide layer, and between the active layer and second confinement layer. The material of the active layer has an index of refraction larger than that of the materials of the first and second confinement layers, the material of the guide layer has an index of refraction less than that of the active layer but greater than that of each of the confinement layers. The guide layer and active layer have a region of uniform thickness directly over the space between the grooves.
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