| 摘要 |
Electronic devices having a multilayer wiring structure, such as a semiconductor device, a bubble memory device and a thin film magnetic head, are manufactured by using, as an insulation layer-forming material, a thermosetting addition polymerization type polyimide, i.e., a polyimide possessing imide rings in the recurring unit thereof and the degree of polymerization of which increases, when cured, due to the radical reaction of the end group or groups. The polyimide insulation layer exhibits better levelling property than that of a conventional condensational type polyimide.
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