Method of fabricating semiconductor integrated circuit device utilizing selective etching and epitaxial refill

摘要

A method of fabricating a semiconductor integrated circuit device wherein a substrate having a particular crystallographic orientation is selectively etched so as to form surface depressions of different depths. An epitaxial layer is grown from a Si-H-Cl system on the surface of the substrate having the surface depressions formed therein. The epitaxial layer is grown under conditions effective to achieve faster lateral growth than vertical growth so as to form the epitaxial layer with regions of three different thicknesses. Subsequently, additional regions of the semiconductor integrated circuit are formed in the epitaxial layer regions of different thicknesses so as to complete the device.