| 摘要 |
<p>PURPOSE:To minimize the gap between the electrodes reducing the wiring power as well as to miniaturize the size and increase the density of the element by a method wherein the electrode material with the high melting point is used for read and write of the fuse type non-volatile memory. CONSTITUTION:A fuse type non-volatile memory comprises the fuse unit 2 consisting of a write and read electrode 1 formed by molybdenum as a material with high melting point on the insulating film 3 and the polysilicon doped with the impurities. This memory will not be shortcircuited even at the 1mum gap of the wirte and read electrode thereby enabling the write with the power of 0.4mWsec. Through these procedures, the write power may be reduced decreasing the area of the write driver elements and increasing the density of the elements.</p> |
