| 摘要 |
PURPOSE:To bring the ratio of the film thickness of a lower layer section and an upper layer section to predetermined value by a method wherein electromigration is prevented by enlarging the grain size of the lower layer section in a wiring thin-film, the strength of wire bonding is ensured, and the generation of a hillock is inhibited by decreasing the grain size of the upper layer section. CONSTITUTION:The grain size of Al2A at the substrate side is enlarged, and the grain size of the Al2B of the upper layer section is decreased. The Al grain size of the lower layer section 2A is -1mum, and Al-Si is formed in the film of 0.4mum grain size at the small sputtering rate in the upper layer section 2B. It is preferable that the ratio of the film thickness of the lower layer section and the upper layer section is 2:1-3:1. Accordingly, a mirror surface, on the Al surface thereof the hillock is not generated, is obtained, electromigration is prevented, and the strength of wire bonding can be ensured. |
